Теллурид галлия (затвор)

Description

Gallium telluride (GaTe) is a binary inorganic compound of gallium and tellurium, a layered van der Waals semiconductor from the gallium monochalcogenide family along with gallium sulfide (GaS) and selenide (GaSe). The crystal structure is built from covalently bonded Te–Ga–Ga–Te tetralayers, held together by weak van der Waals forces, which allows the material to be exfoliated down to a monolayer.

Identification

• English name: Gallium telluride (GaTe)
• CAS No.: 12024-14-5 (also applies 65762-28-9 for Ga2Te2 form)
• Chemical Formula: GaTe
• Synonyms: Gallium monotelluride, Gallium telluride (Ga2Te2)

Physico-chemical characteristics

• Molecular weight: 197.32
• Exact weight: 201.855

Class of substance and properties

It belongs to the group of layered gallium monochalcogenides - GaS, GaSe, GaTe - which have a tunable band gap in the range from 1.7 to 3.2 eV: the value increases as the material becomes thinner from a bulk crystal to a monolayer. The two-dimensional Young's modulus of GaTe layers about 10 nm thick is 246 ± 160 N/m - noticeably lower than that of GaS (1732 ± 154 N/m) and GaSe (819 ± 127 N/m), which makes gallium telluride the most mechanically pliable in this series. The resistance to oxidation in air decreases in the GaS–GaSe–GaTe series: telluride is the least stable in contact with the atmosphere among the three monochalcogenides.

Scope of application

Like other layered gallium monochalcogenides, GaTe is being considered for optoelectronic applications—visible and near-UV photodetectors, photocatalysis for water splitting, hydrogen evolution catalysis, and photoelectrochemical reactions. Efficient light absorption and high charge carrier mobility make the material promising for thin-film and 2D electronics, although reduced stability in air requires protective coatings or encapsulation for practical use.

Storage and transportation

As an air-sensitive semiconductor material, it requires storage in an inert atmosphere or vacuum packaging, in a dry room without access to moisture and oxygen, to prevent surface oxidation of crystals or films.

Comparison with gallium sulfide and selenide

In the series of gallium monochalcogenides GaS–GaSe–GaTe, the resistance to oxidation in air consistently decreases from sulfide to telluride, and the mechanical rigidity of the layer, on the contrary, decreases: the Young’s modulus of GaS is 1732 ± 154 N/m, GaSe is 819 ± 127 N/m, GaTe is only 246 ± 160 N/m. This ratio makes gallium telluride the most flexible, but also the most weather-sensitive material of the family, so in research it is often used with additional surface passivation, for example hydrogen, which reduces the oxidation rate of layered nanofilms.

2D material shape

GaTe is capable of forming two-dimensional single-crystalline films on substrates, including silicon, by transforming the epitaxial hexagonal phase into a monoclinic two-dimensional structure, which is interesting for the integration of layered gallium semiconductors into silicon electronics.